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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode 1996 Sep 16 Product specification Supersedes data of April 1996 Philips Semiconductors Product specification High-speed diode BAV10 FEATURES DESCRIPTION • Hermetically sealed leaded glass The BAV10 is a high-speed switching diode fabricated in planar technology, SOD27 (DO-35) package and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V handbook, halfpage k a • Repetitive peak reverse voltage: max. 60 V MAM246 • Repetitive peak forward current: max. 600 mA. The diode is type branded. APPLICATIONS Fig.1 Simplified outline (SOD27; DO-35) and symbol. • High-speed switching. LIMIT
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