View bav99lt1 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAV99LT1/D Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 CASE 318–08, STYLE 11 SOT–23 (TO–236AB) MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc ANODE CATHODE Forward Current IF 215 mAdc 1 2 Peak Forward Surge Current IFM(surge) 500 mAdc 3 CATHODE/ANODE Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current(1) IF(AV) 715 mA (averaged over any 20 ms period) Repetitive Peak Forward Current IFRM 450 mA Non–Repetitive Peak Forward Current IFSM A t = 1.0 ms 2.0 t = 1.0 ms 1.0 t = 1.0 A 0.5 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR–5 Board,(1) TA = 25°C Derate above 25°C 1.8 mW/
Keywords
bav99lt1 Datasheet, Design, MOSFET, Power
bav99lt1 RoHS, Compliant, Service, Triacs, Semiconductor
bav99lt1 Database, Innovation, IC, Electricity
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