View bav99s datasheet:

BAV 99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Connected in series 6 • Internal (galvanic) isolated Diodes in one package 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BAV 99S A7s Q62702-A1277 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µ s IFS 4.5 A Total power dissipation, TS = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 65 ...+150 Thermal Resistance 1) Junction - ambient RthJA ? 530 K/W Junction - soldering point RthJS ? 260 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Apr-27-1998