View bav99w datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration Package BAV 99W A7s Q62702-A1051 1=A1 2=C2 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Values Unit Diode reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total Power dissipation Ptot mW TS = 103 °C 250 Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 430 K/W Junction - soldering point RthJS ? 190 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Apr-03-1997 BAV 99W Electrical Characteristics at TA=25°C, unless otherwise specified Para
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