View baw56 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Silicon Switching Diode Array BAW 56 For high-speed switching applications Common anode Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAW 56 A1s Q62702-A688 SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =31?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 500 K/W Junction - soldering point Rth JS ? 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 BAW 56 Electrical Characteristics per Di
Keywords
baw56 Datasheet, Design, MOSFET, Power
baw56 RoHS, Compliant, Service, Triacs, Semiconductor
baw56 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet