View baw56 motorola datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAW56LT1/D Monolithic Dual Switching Diode BAW56LT1 Common Anode Motorola Preferred Device CATHODE 1 ANODE 3 2 CATHODE 3 MAXIMUM RATINGS (EACH DIODE) 1 2 Rating Symbol Value Unit Reverse Voltage VR 70 Vdc CASE 318–08, STYLE 12 Forward Current IF 200 mAdc SOT–23 (TO–236AB) Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg