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baw56_siemens

Silicon Switching Diode Array BAW 56 For high-speed switching applications Common anode Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAW 56 A1s Q62702-A688 SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =31?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 500 K/W Junction - soldering point Rth JS ? 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 BAW 56 Electrical Characteristics per Di

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