View baw56s datasheet:

BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal (galvanic) isolated Diodes in one package 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BAW 56S A1s Q62702-A1253 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 70 V VR Peak reverse voltage 70 VRM Forward current 200 mA IF 4.5 A Surge forward current, t = 1 µ s IFS 250 mW Total power dissipation, TS = 85 °C Ptot Junction temperature 150 °C Tj Storage temperature 65 ...+150 Tstg Thermal Resistance 1) Junction - ambient K/W RthJA ? 530 Junction - soldering point RthJS ? 260 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Sep-07-19