View baw56w motorola datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAW56WT1/D Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit 1 2 Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc CASE 419–02, STYLE 4 SC–70/SOT–323 Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 200 mW TA = 25°C Derate above 25°C 1.6 mW/°C Thermal Resistance, Junction to Ambient RqJA 0.625 °C/W Total Device Dissipation PD 300 mW Alumina Substrate(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING A1 ELEC
Keywords
baw56w motorola Datasheet, Design, MOSFET, Power
baw56w motorola RoHS, Compliant, Service, Triacs, Semiconductor
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