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baw56w_siemens

BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration Package BAW 56W A1s Q62702-A1031 1 = C1 2=C2 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Values Unit Diode reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total Power dissipation Ptot mW TS = 103 °C 250 Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 460 K/W Junction - soldering point RthJS ? 190 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAW 56W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter

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