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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BB 439 Silicon Variable Capacitance Diode BB 439 Preliminary Data For VHF tuned circuit applications High figure of merit Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BB 439 white 2 Q62702-B577 SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 28 V Peak reverse voltage VRM 30 Forward current IF 20 mA Operating temperature range Top – 55 … + 125 ?C Storage temperature range Tstg – 55 … + 150 Thermal Resistance Junction - ambient Rth JA ? 450 K/W 1) For detailed information see chapter Package Outlines. 07.94 Semiconductor Group 1 BB 439 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse current IR nA VR = 28 V – – 20 VR = 28 V, TA = 60 ?C – –
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bb439 Datasheet, Design, MOSFET, Power
bb439 RoHS, Compliant, Service, Triacs, Semiconductor
bb439 Database, Innovation, IC, Electricity
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