View 2sc9012 err datasheet:

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25℃) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCEO -30 V Collector-Emitter Voltage M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage -5 V 1. EMITTER IC Collector Current -500 mA 2. BASE 3. COLLECTOR IE Emitter Current 500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ℃ Tstg -55∼150 ℃ Storage Temperature Range * Cu Lead-Frame : 62