All Transistors. Datasheet

 

View 6ri100g-120 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

6ri100g-120

6RI100G-120 Three Phases Bridge Module FEATURES ·The chips are electrically insulated from bosom plate ·High surge current ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC, DC Motor Drive/AVR/Switching for three phase rectification ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT V Repetitive Peak Reverse Voltage T =10ms 1200 V p RRM I Output Current (D.C) TC=100℃ 100 A O I Surge Forward Current 1200 A FSM Half-sine wave,10ms, V =0.6V R RRM I2t I2t for fusing 7200 A2S V Maximum Power Dissipation 50Hz,R.M.S,t=1ms,I =1mA(max) 2500 V iso iso T Junction Temperature -40~150 ℃ J T Storage Temperature Range -40~125 ℃ stg THERMAL CHARACTERISTICS SYMBOL PARAMETE

Keywords

 6ri100g-120 Datasheet, Design, MOSFET, Power

 6ri100g-120 RoHS, Compliant, Service, Triacs, Semiconductor

 6ri100g-120 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.