View 6ri100g-120 detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
6RI100G-120 Three Phases Bridge Module FEATURES The chips are electrically insulated from bosom plate High surge current Low forward voltage drop Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC, DC Motor Drive/AVR/Switching for three phase rectification ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT V Repetitive Peak Reverse Voltage T =10ms 1200 V p RRM I Output Current (D.C) TC=100 100 A O I Surge Forward Current 1200 A FSM Half-sine wave,10ms V =0.6V R RRM I2t I2t for fusing 7200 A2S V Maximum Power Dissipation 50Hz,R.M.S,t=1ms,I =1mA(max) 2500 V iso iso T Junction Temperature -40 150 J T Storage Temperature Range -40 125 stg THERMAL CHARACTERISTICS SYMBOL PARAMETE... See More ⇒
Keywords
6ri100g-120 Design, MOSFET, Power
6ri100g-120 RoHS, Compliant, Service, Triacs, Semiconductor
6ri100g-120 Innovation, IC, Electricity
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