View bcr10cm-12lb isc detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
INCHANGE Semiconductor isc Thyristors BCR10CM-12LB DESCRIPTION With TO-220 packaging Operating in 3 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak reverse voltage 600 V RRM I Average on-state current @Tc=128 10 A T(RSM) I Surge non-repetitive on-state current 60HZ 100 A TSM P Average gate power dissipation ( over any 20 ms period ) 0.5 W G(AV) T Operating junction temperature -40 125 j T Storage temperature -40 150 stg isc website www.isc... See More ⇒
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bcr10cm-12lb isc Design, MOSFET, Power
bcr10cm-12lb isc RoHS, Compliant, Service, Triacs, Semiconductor
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