View bt137s-600e isc detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
INCHANGE Semiconductor isc Thyristors BT137S-600E DESCRIPTION With TO-252( DPAK ) packaging Operating in 4 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak reverse voltage 600 V RRM I Average on-state current 8 A T(RSM) 50HZ 65 I Surge non-repetitive on-state current A TSM 60HZ 71 P Average gate power dissipation ( over any 20 ms period ) 0.5 W G(AV) T Operating junction temperature -40 125 j T Storage temperature -40 150 stg isc website www... See More ⇒
Keywords
bt137s-600e isc Design, MOSFET, Power
bt137s-600e isc RoHS, Compliant, Service, Triacs, Semiconductor
bt137s-600e isc Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y
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