View bt137s-800e isc datasheet:

INCHANGE Semiconductor isc Thyristors BT137S-800E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 800 V DRM V Repetitive peak reverse voltage 800 V RRM I Average on-state current 8 A T(RSM) 50HZ 65 I Surge non-repetitive on-state current A TSM 60HZ 71 P Average gate power dissipation ( over any 20 ms period ) 0.5 W G(AV) T Operating junction temperature -40~125 ℃ j T Storage temperature -40~150 ℃ stg ELECTRICAL CHARAC