View dan217u detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
DAN217U SOT-323 SWITCHING DIODE FEATURES * Power dissipation PD 200 mW (Tamb=25OC) Forward current * IF 100 mA Reverse voltage * VR 80 V SOT-323 Operating and storage junction temperature range * TJ,Tstg -65OC to +150OC MECHANICAL DATA * Case Molded plastic 0.053(1.35) 0.045(1.15) * Epoxy UL 94V-O rate flame retardant * Lead MIL-STD-202E method 208C guaranteed 0.006(0.15) 0.043(1.10) 0.003(0.08) 0.035(0.90) * Mounting position Any 0.004(0.10) * Weight 0.006 gram REF 0.021(0.53) 0.000(0.00) * Marking A7 0.096(2.45) 0.085(2.15) 0.016(0.40) 0.008(0.20) 1 0.055(1.40) 0.087(2.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3 0.047(1.20) 0.079(2.00) Ratings at 25 oC ambient temperature unless otherwise specified. 2 3 1 2 Dimensions in ... See More ⇒
Keywords
dan217u Design, MOSFET, Power
dan217u RoHS, Compliant, Service, Triacs, Semiconductor
dan217u Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y
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