View hbr20150s datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
INCHANGE Semiconductor Schottky Barrier Rectifier HBR20150S FEATURES ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) UNI SYMBOL PARAMETER VALUE T V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage V 150 V RWM DC Blocking Voltage V R I Average Rectified Forward Current@Tc=150℃ 20 A F(AV) Nonrepetitive Peak Surge Current （ 8.3ms single half sine-wave superimposed I 180 A FSM on rated load conditions）tp
Keywords
hbr20150s Datasheet, Design, MOSFET, Power
hbr20150s RoHS, Compliant, Service, Triacs, Semiconductor
hbr20150s Database, Innovation, IC, Electricity
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