View m58wr064et datasheet:

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz FBGA – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program VFBGA56 (ZB) – Double/Quadruple Word Program option 7.7 x 9 mm – Enhanced Factory Program options MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) ELECTRONIC SIGNATURE DUAL OPERATIONS – Manufacturer Code: 20h – Program Erase in one