View m58wr128et datasheet:

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz FBGA – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME VFBGA60 (ZB) – 8µs by Word typical for Fast Factory Program 12.5 x 12mm – Double/Quadruple Word Program option – Enhanced Factory Program options MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks ELECTRONIC SIGNATURE – Parameter Blocks (Top or Bottom location) – Manufacturer