View mbr20100cd datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Schottky Barrier Rectifier MBR20100CD FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Peak Repetitive Reverse Voltage RRM 100 V DC Blocking Voltage V R I Average Rectified Forward Current 20 A F(AV) Nonrepetitive Peak Surge Current I 240*2 A FSM 8.3ms single half sine-wave superimposed on rated load conditions T
Keywords
mbr20100cd Datasheet, Design, MOSFET, Power
mbr20100cd RoHS, Compliant, Service, Triacs, Semiconductor
mbr20100cd Database, Innovation, IC, Electricity
