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mbr20150cd

Schottky Barrier Rectifier MBR20150CD FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·For use in low voltage,high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT Peak Repetitive Reverse Voltage 150 V V RRM I Average Rectified Forward Current 20 A F(AV) Nonrepetitive Peak Surge Current I 290*2 A FSM 8.3ms single half sine-wave superimposed on rated load conditions T Junction Temperature 150 ℃ J T Storage Temperature Range -40~150 ℃ stg THERMAL CHARACTERISTIC

Keywords

 mbr20150cd Datasheet, Design, MOSFET, Power

 mbr20150cd RoHS, Compliant, Service, Triacs, Semiconductor

 mbr20150cd Database, Innovation, IC, Electricity

 

 
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