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mbrb1060

Schottky Barrier Rectifier MBRB1060 FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability,Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT Peak Repetitive Reverse Voltage 60 V V RRM I Average Rectified Forward Current 10 A F(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 150 A I FSM wave, single phase, 60Hz) T Junction Temperature -65~150 ℃ J T Storage Temperature Range -65~150 ℃ stg THERMAL CHARACTERISTICS SYMBOL PAR

Keywords

 mbrb1060 Datasheet, Design, MOSFET, Power

 mbrb1060 RoHS, Compliant, Service, Triacs, Semiconductor

 mbrb1060 Database, Innovation, IC, Electricity

 

 
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