View mbrd10100ct datasheet:

INCHANGE Semiconductor Schottky Barrier Rectifier MBRD10100CT FEATURES ·With TO-251(DPKE) package ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss,High Efficiency ·High Surge Capability ·High Current Capability and Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage V Working Peak Reverse Voltage 100 V RWM DC Blocking Voltage V R Average Rectified Forward Current I 10 A F(AV) (Rated V ) T = 100℃ R C Non-repetitive Peak Surge Current 120 A I FSM 8.3ms half sine wave T Junc