View mbrd10200ct datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Schottky Rectifier MBRD10200CT FEATURES ·High frequency operation ·Guard ring for enhanced ruggedness and long term reliability ·Low forward voltage drop ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage RMS Voltage 200 V V RMS DC Blocking Voltage V R Average Rectified Forward Current 10 A I F(AV) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on 128 A I FSM rated load conditions T Junction Temperature -55~150 ℃ J T Storage Temperature Range -55~150 ℃ stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX
Keywords
mbrd10200ct Datasheet, Design, MOSFET, Power
mbrd10200ct RoHS, Compliant, Service, Triacs, Semiconductor
mbrd10200ct Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet