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mbrd10200ct

Schottky Rectifier MBRD10200CT FEATURES ·High frequency operation ·Guard ring for enhanced ruggedness and long term reliability ·Low forward voltage drop ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage RMS Voltage 200 V V RMS DC Blocking Voltage V R Average Rectified Forward Current 10 A I F(AV) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on 128 A I FSM rated load conditions T Junction Temperature -55~150 ℃ J T Storage Temperature Range -55~150 ℃ stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

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 mbrd10200ct Datasheet, Design, MOSFET, Power

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