View mbrd1045 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
INCHANGE Semiconductor Schottky Barrier Rectifier MBRD1045 FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage RMS Voltage 45 V V RMS DC Blocking Voltage V R Average Rectified Forward Current 10 A I F(AV) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on 150 A I FSM rated load conditions
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mbrd1045 Datasheet, Design, MOSFET, Power
mbrd1045 RoHS, Compliant, Service, Triacs, Semiconductor
mbrd1045 Database, Innovation, IC, Electricity
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