View mbrs1035 datasheet:

INCHANGE Semiconductor Schottky Barrier Rectifier MBRS1035 FEATURES ·Schottky barrier chip ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Low Forward Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage V Working Peak Reverse Voltage 35 V RWM DC Blocking Voltage V R Average Rectified Forward Current I 10 A F(AV) Non-repetitive Peak Surge Current I 120 A FSM 8.3 ms Single Half Sine-wave Superimposed on Rated Load T Junction Temper