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q7n60c3_err

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 Ω • New revolutionary high voltage technology ID 7.3 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated 3 • High peak current capability 2 3 2 1 1 P-TO220-3-31 • Improved transconductance P-TO220-3-1 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP07N60C3 PG-TO220-3 Q67040-S4400 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3 SPA07N60C3 PG-TO220FP 07N60C3 SP000216303 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current ID A TC = 25 °C 7.3 7.31) TC = 100 °C 4.6 4.61) Pulsed drain current, tp limited

Keywords

 q7n60c3 err Datasheet, Design, MOSFET, Power

 q7n60c3 err RoHS, Compliant, Service, Triacs, Semiconductor

 q7n60c3 err Database, Innovation, IC, Electricity

 

 
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