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srf30100ct

Schottky Barrier Rectifier SRF30100CT FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability ·low forward voltage drop ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT Peak Repetitive Reverse Voltage 100 V V RRM Average Rectified Forward Current 30 A I F(AV) (Rated V ) T = 95℃ R C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 300 A I FSM wave, single phase, 60Hz) I Peak Repetitive Reverse Surge Current 0.5 A RRM T Junction Temperature -65~150 ℃

Keywords

 srf30100ct Datasheet, Design, MOSFET, Power

 srf30100ct RoHS, Compliant, Service, Triacs, Semiconductor

 srf30100ct Database, Innovation, IC, Electricity

 

 
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