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stps15h100cb

INCHANGE Semiconductor Schottky Rectifier STPS15H100CB FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V R IF(RMS) RMS Forward current 10 A Average Rectified Forward per diode 7.5 A I F(AV) Current Tc=135℃;δ=0.5

Keywords

 stps15h100cb Datasheet, Design, MOSFET, Power

 stps15h100cb RoHS, Compliant, Service, Triacs, Semiconductor

 stps15h100cb Database, Innovation, IC, Electricity

 

 
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