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stps16170cb

INCHANGE Semiconductor High Voltage Power Schottky Rectifier STPS16170CB FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 170 V V RWM DC Blocking Voltage V R IF(RMS) RMS Forward current 20 A Average Rectified Forward per diode 8 A I F(AV) Current

Keywords

 stps16170cb Datasheet, Design, MOSFET, Power

 stps16170cb RoHS, Compliant, Service, Triacs, Semiconductor

 stps16170cb Database, Innovation, IC, Electricity

 

 
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