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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

stps20h100ct

INCHANGE Semiconductor High Voltage Power Schottky Rectifier STPS20H100CT FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V R IF(RMS) RMS Forward current 30 A Average Rectified Forward per diode 10 A I F(AV) Curren

Keywords

 stps20h100ct Datasheet, Design, MOSFET, Power

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