View stps20m100sg-tr datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Schottky Barrier Rectifier STPS20M100SG-TR FEATURES ·Schottky Barrier Chip ·Low forward voltage drop meaning very small conduction losses ·Reverse voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching diode ·SMPS ·DC/DC converter ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage V Working Peak Reverse Voltage 100 V RWM DC Blocking Voltage V R Average Rectified Forward Current 20 A I F(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions 350 A I FSM half-wave, single phase, 60Hz) P Maximum power dissipation 105 W D T Junction Temperature 150 ℃ J T Storage Temperature Range -40~150 ℃ stg 1 isc website：w
Keywords
stps20m100sg-tr Datasheet, Design, MOSFET, Power
stps20m100sg-tr RoHS, Compliant, Service, Triacs, Semiconductor
stps20m100sg-tr Database, Innovation, IC, Electricity
