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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

tlp251f

TLP251F TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC TLP251F Inverter For Air Conditionor Unit in mm Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) • Input threshold current: IF = 5mA (max.) • Supply current: 11mA (max.) TOSHIBA 11-10C402 • Supply voltage: 10~35V Weight: 0.54g • Output peak current: ±0.4A (max.) • Switching time: t , t = 1µs (max.) pHL pLH • Isolation voltage: 2500V (min.) rms • UL recognized: U

Keywords

 tlp251f Datasheet, Design, MOSFET, Power

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 tlp251f Database, Innovation, IC, Electricity

 

 
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