View tssd10l200sw datasheet:

INCHANGE Semiconductor Schottky Barrier Rectifier TSSD10L200SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremely low reverse leakage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Lighting application ·DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT Peak Repetitive Reverse Voltage 200 V V RRM DC Blocking Voltage I Average Rectified Forward Current 10 A F(AV) Non-repetitive Peak Surge Current (8.3ms single half sine-wave superimposed 200 A I FSM on rated load per diode) T Junction Temperature -55~150 ℃ J Storage Temperature Range -55~150 ℃ T stg 1 isc website：www.iscsemi.com isc & iscsemi is registered trademark INCHANGE S