View tssd20l200sw datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Schottky Barrier Rectifier TSSD20L200SW FEATURES ·With TO-252(DPAK) packaging ·Low power loss ·High efficiency ·High frequency operation ·High surge capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a UNI SYMBOL PARAMETER VALUE T V RRM Peak Repetitive Reverse Voltage RMS Voltage V 200 V RMS DC Blocking Voltage V R I Average Rectified Forward Current @Tc=106℃ 20 A F(AV) Nonrepetitive Peak Surge Current (10ms single half sine-wave superimposed on 200 A I FSM rated load conditions,60Hz) T Junction Temperature -55~150 ℃
Keywords
tssd20l200sw Datasheet, Design, MOSFET, Power
tssd20l200sw RoHS, Compliant, Service, Triacs, Semiconductor
tssd20l200sw Database, Innovation, IC, Electricity
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