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View usm8j48 isc detailed specifications:

POWER MOSFET, IGBT, IC, TRIACS DATABASE

usm8j48_isc

isc Thyristors USM8J48 DESCRIPTION With TO-263( D2PAK ) packaging Operating in 3 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak reverse voltage 600 V RRM I Average on-state current 8 A T(RSM) 50HZ 80 I Surge non-repetitive on-state current A TSM 60HZ 88 P Average gate power dissipation ( over any 20 ms period ) 0.5 W G(AV) T Operating junction temperature -40 125 j T Storage temperature -40 125 stg ELECTRICAL CHARACTERISTICS (T =25 unless ... See More ⇒

Keywords

 usm8j48 isc Design, MOSFET, Power

 usm8j48 isc RoHS, Compliant, Service, Triacs, Semiconductor

 usm8j48 isc Innovation, IC, Electricity

 

 
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