View usm8j48 isc datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
isc Thyristors USM8J48 DESCRIPTION ·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak reverse voltage 600 V RRM I Average on-state current 8 A T(RSM) 50HZ 80 I Surge non-repetitive on-state current A TSM 60HZ 88 P Average gate power dissipation ( over any 20 ms period ) 0.5 W G(AV) T Operating junction temperature -40~125 ℃ j T Storage temperature -40~125 ℃ stg ELECTRICAL CHARACTERISTICS (T =25℃ unless
Keywords
usm8j48 isc Datasheet, Design, MOSFET, Power
usm8j48 isc RoHS, Compliant, Service, Triacs, Semiconductor
usm8j48 isc Database, Innovation, IC, Electricity
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