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ZC830/A/B SOT23 SILICON VARIABLE to CAPACITANCE DIODES ZC836/A/B ISSUE 5 – JANUARY 1998 1 FEATURES 2 * Close Tolerance C-V Characteristics 1 * High Tuning Ratio * Low IR 3 Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) SOT23 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MAX UNIT Forward Current IF 200 mA Power Dissipation at Tamb =25°C Ptot 330

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050