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ZC830/A/B SOT23 SILICON VARIABLE to CAPACITANCE DIODES ZC836/A/B ISSUE 5 – JANUARY 1998 1 FEATURES 2 * Close Tolerance C-V Characteristics 1 * High Tuning Ratio * Low IR 3 Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) SOT23 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MAX UNIT Forward Current IF 200 mA Power Dissipation at Tamb =25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Reverse Breakdown VBR 25 V IR=10µA Voltage Reverse Voltage Leakage IR 0.2 10 nA VR=20V Temperature Coefficient η 0.03 0.04 %/°C VR=3V, f=1MHz of Capacitance TUNING CHARACTERISTICS (at Tamb =25°C) Nominal Capacitance (pF) Minimum