G7N60C3D 参数及代换

 

G7N60C3D 三极管参数

制造商零件编号: G7N60C3D

沟道类型: N-Channel

最大耗散功率 (Pc): 60W

集电极--发射极击穿电压 (Vce): 600V

集电极--发射极饱和压降 (Vcesat): 2V

栅极-发射极最大电压 (Veg): 20V

在25 C的连续集电极电流 (Ic): 14A

最大工作温度 (Tj), °C: 150

导通上升时间: 8.5

输出电容 (Cc), pF:

封装形式: TO220AB

G7N60C3D 参数及代换

 

G7N60C3D Datasheet (PDF)

5.1. hgtp7n60a4_hgtg7n60a4_hgt1s7n60a4.pdf Size:173K _fairchild_semi

G7N60C3D
G7N60C3D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high i

其他IGBT晶体管 : G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , IKW40T120 , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U .

 


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