BT30N60ANF 参数及代换

 

BT30N60ANF 三极管参数

制造商零件编号: BT30N60ANF

沟道类型: N-Channel

最大耗散功率 (Pc): 312

集电极--发射极击穿电压 (Vce): 600

集电极--发射极饱和压降 (Vcesat): 2.5

栅极-发射极最大电压 (Veg): 20

在25 C的连续集电极电流 (Ic): 30

最大工作温度 (Tj), °C: 150

导通上升时间: 36

输出电容 (Cc), pF: 140

封装形式: TO3PN

BT30N60ANF 参数及代换

 

BT30N60ANF PDF doc:

1.1. bt30n60anf.pdf Size:103K _igbt_a

BT30N60ANF
BT30N60ANF

Silicon FS Planar IGBT R ○ BT30N60ANF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features: FS Planar Technology, Positive temperature

1.2. bt30n60anf.pdf Size:105K _crhj

BT30N60ANF
BT30N60ANF

Silicon FS Planar IGBT R ○ BT30N60ANF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features: FS Planar Technology, Positive temperature

其他IGBT晶体管 : BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , RJP30H1DPD , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P .

 


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