75339P 参数及代换

 

75339P 场效应管参数

制造商产品编号: 75339P

系列: MOSFET

沟道: N

耗散功率 (Pd): 124

漏源反向电压 (Vds): 55

栅源反向电压 (Vgs): 20

漏极电流(连续) (Id): 75

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF: 2000

通态电阻 (Rds), Ohm: 0.012

封装形式: TO220

75339P 参数及代换

 

75339P Datasheet (PDF)

1.1. huf75339g3_huf75339p3_huf75339s3s.pdf Size:308K _fairchild_semi

75339P
75339P

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

其他MOSFET晶体管: 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , IRF630 , 75339S , 7N50A , A498 , ALD1101APA , ALD1101BPA , ALD1101DA , ALD1101MA , APT1001R1AN .

 


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