IRFZ44V 参数及代换

 

IRFZ44V 场效应管参数

制造商产品编号: IRFZ44V

系列: MOSFET

沟道: N

耗散功率 (Pd): 115

漏源反向电压 (Vds): 60

栅源反向电压 (Vgs): 20

漏极电流(连续) (Id): 55

最高结温 (Tj), °C:

上升时间 (tr):

输出电容 (Cd), pF:

通态电阻 (Rds), Ohm: 0.0165

封装形式: TO220AB

IRFZ44V 参数及代换

 

IRFZ44V Datasheet (PDF)

1.1. irfz44vs.pdf Size:145K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques

1.2. irfz44v.pdf Size:229K _international_rectifier

IRFZ44V
IRFZ44V

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.1. irfz44n.pdf Size:100K _update

IRFZ44V
IRFZ44V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

4.2. irfz44n_1.pdf Size:52K _philips

IRFZ44V
IRFZ44V

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

4.3. irfz44ns_1.pdf Size:57K _philips

IRFZ44V
IRFZ44V

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

4.4. irfz44n.pdf Size:100K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.5. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

4.6. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44V
IRFZ44V

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

4.7. irfz44s.pdf Size:325K _international_rectifier

IRFZ44V
IRFZ44V

PD - 9.893A IRFZ44S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.8. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44V
IRFZ44V

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

4.9. irfz44.pdf Size:859K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94943 IRFZ44PbF Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline Dime

4.10. irfz44es.pdf Size:163K _international_rectifier

IRFZ44V
IRFZ44V

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

4.11. irfz44e.pdf Size:96K _international_rectifier

IRFZ44V
IRFZ44V

PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb

4.12. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175C Operating Temperature l Fast Switching RDS(on) = 0.028? G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rect

4.13. irfz44r.pdf Size:153K _international_rectifier

IRFZ44V
IRFZ44V

PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.028? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

4.14. irfz44a.pdf Size:503K _samsung

IRFZ44V
IRFZ44V

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

4.15. irfz44s_irfz44l_sihfz44s_sihfz44l.pdf Size:790K _vishay

IRFZ44V
IRFZ44V

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) (?)VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast Switching Qgd (nC)

4.16. irfz44_sihfz44.pdf Size:1540K _vishay

IRFZ44V
IRFZ44V

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

4.17. irfz44r_sihfz44r.pdf Size:1287K _vishay

IRFZ44V
IRFZ44V

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the IRFZ44, SiHFZ44 for

4.18. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44V
IRFZ44V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contro

4.19. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ44V
IRFZ44V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contr

4.20. lirfz44n.pdf Size:252K _lrc

IRFZ44V
IRFZ44V

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

其他MOSFET晶体管: IRFU3711Z , IRFU3806 , IRFU4104 , IRFU4105Z , IRFU4615 , IRFU4620 , IRFU48Z , IRFU9N20D , IRFZ44A , IRFZ44VL , IRFZ44VS , IRFZ44VZ , IRFZ44VZS , IRFZ44Z , IRFZ44ZL , IRFZ44ZS , IRFZ46Z .

 


IRFZ44V
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IRFZ44V
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