IRF540N 参数及代换

 

IRF540N 场效应管参数

制造商产品编号: IRF540N

系列: MOSFET

沟道: N

耗散功率 (Pd): 140

漏源反向电压 (Vds): 100

栅源反向电压 (Vgs): 10

漏极电流(连续) (Id): 33

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF:

通态电阻 (Rds), Ohm: 0.052

封装形式: TO220AB

IRF540N 参数及代换

 

IRF540N Datasheet (PDF)

1.1. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistanc

1.2. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf540ns.pdf Size:2432K _kexin

IRF540N
IRF540N

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

其他MOSFET晶体管: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

 


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