RFL1P10 参数及代换

 

RFL1P10 场效应管参数

制造商产品编号: RFL1P10

系列: MOSFET

沟道: P

耗散功率 (Pd): 8.33

漏源反向电压 (Vds): 100

栅源反向电压 (Vgs): 20

漏极电流(连续) (Id): 1

最高结温 (Tj), °C: 150

上升时间 (tr): 15

输出电容 (Cd), pF: 80

通态电阻 (Rds), Ohm: 3.65

封装形式: TO205AF

RFL1P10 参数及代换

 

RFL1P10 PDF doc:

1.1. rfl1p08_rfl1p10.pdf Size:85K _njs

RFL1P10
RFL1P10



其他MOSFET晶体管: RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , BUZ11 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 .

 


RFL1P10
  RFL1P10
  RFL1P10
  RFL1P10
 
RFL1P10
  RFL1P10
  RFL1P10
  RFL1P10
 

social 

目录

推荐产品

场效应管MOSFET AOT27S60L | AOT270L | AOT25S65L | AOT22N50L | AOT20S60L | AOT20N60L | AOT20N25L | AOT15S65L | AOT15S65 | AOT15S60L | AOT11S65L | AOT11S60L | AON5802A | AON5800 | AON4701 |

长度至少2个字符,最大长度为20!