A1015 参数及代换

 

A1015 三极管参数

制造商产品编号: A1015

材料 : Si

晶体管极性 : PNP

功耗 (Pd) : 0.2

集电极--基极击穿电压 (Vcb): 50

集电极--发射极击穿电压 (Vce): 50

发射极--基极击穿电压 (Veb): 5

最大集电极电流 (Ic): 0.15

工作温度最高值 (Tj), °C: 125

最大工作频率 (ft): 80

输出电容 (Cc), pF:

直流电流增益 (hfe): 130

晶体管封装类型: SOT23

A1015 参数及代换

 

A1015 Datasheet (PDF)

1.1. a1015s.pdf Size:263K _update

A1015

A1015S 风光欣技术资料 —PNP Silicon— PNP Transistors ■■ APPLICATION:Low Frequency Amplifier Applications. ■■ MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL RATING UNIT VCBO -50 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -5 V Emitter-base voltage IC -0.15 A Collector current PC 0.3 Collector Power Dissipation W Tj 150 ℃ Junc

1.2. 2sa1015-y.pdf Size:504K _update

A1015
A1015

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.3. 2sa1015lt1.pdf Size:145K _update

A1015
A1015

 SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3 Emitter-Base Voltage Vebo -5 V

1.4. 2sa1015-gr.pdf Size:504K _update

A1015
A1015

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.5. 2sa1015-o.pdf Size:504K _update

A1015
A1015

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.6. 2sa1015.pdf Size:227K _toshiba

A1015
A1015

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

1.7. 2sa1015l.pdf Size:228K _toshiba

A1015
A1015

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low nois

1.8. ksa1015.pdf Size:42K _fairchild_semi

A1015
A1015

KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA

1.9. 2sa1015.pdf Size:138K _utc

A1015
A1015

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plat

1.10. 2sa1015k.pdf Size:252K _secos

A1015
A1015

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage

1.11. a1015.pdf Size:443K _secos

A1015
A1015

A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 7

1.12. csa1015.pdf Size:195K _cdil

A1015
A1015

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V

1.13. a1015.pdf Size:337K _htsemi

A1015
A1015

A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collect

1.14. a1015_sot-23.pdf Size:214K _lge

A1015
A1015

A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS

1.15. a1015_to-92.pdf Size:192K _lge

A1015
A1015

A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation

1.16. a1015lt1.pdf Size:166K _wietron

A1015
A1015

A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless oth

1.17. a1015.pdf Size:720K _wietron

A1015
A1015

A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction T

1.18. a1015.pdf Size:334K _willas

A1015
A1015

FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in ord

1.19. hsa1015.pdf Size:45K _hsmc

A1015
A1015

Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................

1.20. a1015_sot-23.pdf Size:309K _can-sheng

A1015
A1015

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Vo

1.21. a1015.pdf Size:373K _can-sheng

A1015
A1015

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES SOT-23 ♦ High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ♦ Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) ♦ Low nio

1.22. 2sa1015m.pdf Size:926K _blue-rocket-elect

A1015
A1015

2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流容量大,极好的hFE 特性,低噪声,可与2SC1815M(BR3DG1815M)互补。 High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3D

1.23. fta1015.pdf Size:262K _first_silicon

A1015
A1015

SEMICONDUCTOR FTA1015 TECHNICAL DATA B C FEATURES TO-92 PNP Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage -50 V G 0.85 H 0.45 _ H J 14.00 + 0.50 VCEO Collector-Emitter Voltage -50 V L 2.30 F F M 0.51 MAX VEBO Emit

1.24. 2sa1015.pdf Size:775K _kexin

A1015
A1015

SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose: NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC

1.25. 2sa1015.pdf Size:284K _shenzhen-tuofeng-semi

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

1.26. a1015.pdf Size:538K _shenzhen-tuofeng-semi

A1015
A1015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage

其他晶体管: 2SD0602A , 2SD2098 , 2SD2114 , 2SD2142 , 2SD2150 , 2SD2413 , 2SD965A , 3DK2222A , AC127 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , C945 .

 


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