2SB1260-Q 参数及代换

 

2SB1260-Q 三极管参数

制造商产品编号: 2SB1260-Q

印章 : BEQ

材料 : Si

晶体管极性 : PNP

功耗 (Pd) : 0.5

集电极--基极击穿电压 (Vcb): 80

集电极--发射极击穿电压 (Vce): 80

发射极--基极击穿电压 (Veb): 5

最大集电极电流 (Ic): 1

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 100

输出电容 (Cc), pF: 25

直流电流增益 (hfe): 120

晶体管封装类型: SOT89

2SB1260-Q 参数及代换

 

2SB1260-Q Datasheet (PDF)

1.1. 2sb1260-q.pdf Size:50K _update

2SB1260-Q

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

2.1. 2sb1260-r.pdf Size:50K _update

2SB1260-Q

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

2.2. 2sb1260-p.pdf Size:50K _update

2SB1260-Q

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

其他晶体管: 2SB1216S-H , 2SB1216S-TL-E , 2SB1216S-TL-H , 2SB1216T-E , 2SB1216T-H , 2SB1216T-TL-E , 2SB1216T-TL-H , 2SB1260-P , S9013 , 2SB1260-R , 2SB1302S-TD-E , 2SB1302T-TD-E , 2SB1308-P , 2SB1308-Q , 2SB1308-R , 2SB975-220 , 2SBA42 .

 


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