2SB1308-R 参数及代换

 

2SB1308-R 三极管参数

制造商产品编号: 2SB1308-R

印章 : BFR

材料 : Si

晶体管极性 : PNP

功耗 (Pd) : 0.5

集电极--基极击穿电压 (Vcb): 30

集电极--发射极击穿电压 (Vce): 20

发射极--基极击穿电压 (Veb): 6

最大集电极电流 (Ic): 3

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 60

输出电容 (Cc), pF: 120

直流电流增益 (hfe): 180

晶体管封装类型: SOT89

2SB1308-R 参数及代换

 

2SB1308-R Datasheet (PDF)

1.1. 2sb1308-r.pdf Size:50K _update

2SB1308-R

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

2.1. 2sb1308-p.pdf Size:50K _update

2SB1308-R

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

2.2. 2sb1308-q.pdf Size:50K _update

2SB1308-R

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

其他晶体管: 2SB1216T-TL-H , 2SB1260-P , 2SB1260-Q , 2SB1260-R , 2SB1302S-TD-E , 2SB1302T-TD-E , 2SB1308-P , 2SB1308-Q , BU808DFI , 2SB975-220 , 2SBA42 , 2SBA92 , 2SC2001-K , 2SC2001-L , 2SC2001-M , 2SC2120-O , 2SC2120-Y .

 


2SB1308-R
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2SB1308-R
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