Alle IGBT. SKM40GDL123D Datenblatt

 

SKM40GDL123D . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SKM40GDL123D

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 220W

Kollektor-Emitter-Sperrspannung (Vce): 1200V

Kollektor-Emitter Sättigungsspannung (Vcesat): 3.1V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 40A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse:

Ersatz (vergleichstyp) für SKM40GDL123D Transistor

 

SKM40GDL123D Datasheet (PDF)

3.1. skm40gd123d.pdf Size:662K _igbt

SKM40GDL123D
SKM40GDL123D



5.1. skm400gb125d.pdf Size:772K _igbt

SKM40GDL123D
SKM40GDL123D



5.2. skm400gb12t4.pdf Size:379K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12T4 Tc =80°C

5.3. skm400gb176d.pdf Size:749K _igbt

SKM40GDL123D
SKM40GDL123D



5.4. skm400ga12e4.pdf Size:627K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 616 A Tj = 175 °C Tc =80°C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 4 tpsc VGE ≤ 15 V Tj =150°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GA12E4 Tc =8

5.5. skm400gar12v.pdf Size:477K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAR12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 612 A Tj = 175 °C Tc =80°C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAR12V Tc =80°C 329 A IFn

5.6. skm400gal12t4.pdf Size:415K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAL12T4 Tc =80

5.7. skm400gb066d.pdf Size:847K _igbt

SKM40GDL123D
SKM40GDL123D



5.8. skm400gb12v.pdf Size:438K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 612 A Tj = 175 °C Tc =80°C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12V Tc =80°C 329 A IFnom

5.9. skm400gar12e4.pdf Size:414K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAR12E4 Tc =80°C 32

5.10. skm400ga123d.pdf Size:539K _igbt

SKM40GDL123D
SKM40GDL123D



5.11. skm400ga12v.pdf Size:412K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 612 A Tj = 175 °C Tc =80°C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 4 tpsc VGE ≤ 15 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GA12V Tc =80°C 329 A IFnom

5.12. skm400gal12v.pdf Size:475K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 612 A Tj = 175 °C Tc =80°C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAL12V Tc =80°C 329 A IFn

5.13. skm400gb126d.pdf Size:587K _igbt

SKM40GDL123D
SKM40GDL123D



5.14. skm400gb12e4.pdf Size:644K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 616 A Tj = 175 °C Tc =80°C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj =150°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GB12E4 Tc =8

5.15. skm400ga12t4.pdf Size:628K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 616 A Tj = 175 °C Tc =80°C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 4 tpsc VGE ≤ 15 V Tj =150°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GA12T4

5.16. skm400gal176d.pdf Size:749K _igbt

SKM40GDL123D
SKM40GDL123D



5.17. skm400gal12e4.pdf Size:414K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAL12E4 Tc =80°C 32

5.18. skm400gal125d.pdf Size:772K _igbt

SKM40GDL123D
SKM40GDL123D



5.19. skm400ga173d.pdf Size:548K _igbt

SKM40GDL123D
SKM40GDL123D



5.20. skm400gb123d.pdf Size:638K _igbt

SKM40GDL123D
SKM40GDL123D



5.21. skm400gm12t4.pdf Size:377K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GM12T4 Tc =80°

5.22. skm400gar12t4.pdf Size:415K _igbt

SKM40GDL123D
SKM40GDL123D

SKM400GAR12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 618 A Tj = 175 °C Tc =80°C 475 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 440 A Tj = 175 °C SKM400GAR12T4 Tc =80

Anderen IGBT... SKM400GAL124D , SKM400GAR062D , SKM400GAR124D , SKM400GB062D , SKM400GB123D , SKM400GB124D , SKM40GD123D , SKM40GD124D , RJP30E2DPP-M0 , SKM500GA123D , SKM500GA123S , SKM500GA124D , SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL .

 


SKM40GDL123D
  SKM40GDL123D
  SKM40GDL123D
  SKM40GDL123D
 
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Letztes Update

IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |