Alle IGBT. NGB8204N Datenblatt

 

NGB8204N . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: NGB8204N

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 115W

Kollektor-Emitter-Sperrspannung (Vce): 400V

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.8V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 18A

Höchstzulässige Sperrschichttemperatur (Tj), °C:

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: D2PAK-3

Ersatz (vergleichstyp) für NGB8204N Transistor

 

NGB8204N Datasheet (PDF)

3.1. ngb8204a.pdf Size:126K _igbt

NGB8204N
NGB8204N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

4.1. ngb8206a.pdf Size:123K _igbt

NGB8204N
NGB8204N

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.2. ngb8202a.pdf Size:123K _igbt

NGB8204N
NGB8204N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.3. ngb8207ab.pdf Size:124K _igbt

NGB8204N
NGB8204N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

4.4. ngb8207b.pdf Size:130K _igbt

NGB8204N
NGB8204N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Anderen IGBT... FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , IRG7R313U , NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , NGD18N40CLB , NGD8201A , NGD8201N .

 


NGB8204N
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NGB8204N
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