Alle IGBT. IXGR64N60A3 Datenblatt

 

IXGR64N60A3 . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXGR64N60A3

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.35V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): A

Höchstzulässige Sperrschichttemperatur (Tj), °C:

Anstiegszeit: 222

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: ISOPLUS247

Ersatz (vergleichstyp) für IXGR64N60A3 Transistor

 

IXGR64N60A3 Datasheet (PDF)

1.1. ixgr64n60a3.pdf Size:183K _igbt_a

IXGR64N60A3
IXGR64N60A3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G IC110 TC = 11

5.1. ixgr60n60c2.pdf Size:612K _ixys

IXGR64N60A3
IXGR64N60A3

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (ISOLATED TAB) VGES Continuous 20

5.2. ixgr60n60c3c1.pdf Size:194K _ixys

IXGR64N60A3
IXGR64N60A3

GenX3TM 600V IGBT VCES = 600V IXGR60N60C3C1 w/ SiC Anti-Parallel IC110 = 30A ? Diode VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 50ns (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G VGES Continuous 20 V C Isolated Tab E VGEM Transien

5.3. ixgr60n60b2.pdf Size:797K _ixys

IXGR64N60A3
IXGR64N60A3

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V C (ISOLATED TAB) E

5.4. ixgr60n60c2d1.pdf Size:505K _igbt_a

IXGR64N60A3
IXGR64N60A3

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (ISOLATED TAB) VGES Conti

5.5. ixgr60n60b2d1.pdf Size:511K _igbt_a

IXGR64N60A3
IXGR64N60A3

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (ISOLAT

5.6. ixgr60n60c2.pdf Size:505K _igbt_a

IXGR64N60A3
IXGR64N60A3

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (ISOLATED TAB) VGES Conti

5.7. ixgr60n60c3c1.pdf Size:192K _igbt_a

IXGR64N60A3
IXGR64N60A3

GenX3TM 600V IGBT VCES = 600V IXGR60N60C3C1 w/ SiC Anti-Parallel IC110 = 30A ≤ Diode VCE(sat) ≤ ≤£ 2.5V ≤ ≤ tfi(typ) = 50ns (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Isolated T

5.8. ixgr60n60c3d1.pdf Size:214K _igbt_a

IXGR64N60A3
IXGR64N60A3

TM VCES = 600V GenX3 600V IGBT IXGR60N60C3D1 IC110 = 30A w/ Diode ≤ VCE(sat) ≤ 2.5V ≤£ ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C

5.9. ixgr6n170a.pdf Size:169K _igbt_a

IXGR64N60A3
IXGR64N60A3

Advance Technical Information High Voltage IGBT VCES = 1700V IXGR6N170A IC25 = 5.5A ≤ ≤ VCE(sat) ≤ 7.0V ≤ ≤ tfi(typ) = 32ns (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V G IC25 TC = 25°C 5.5 A C Isolated Ta

5.10. ixgr60n60c2c1.pdf Size:180K _igbt_a

IXGR64N60A3
IXGR64N60A3

HiperFASTTM IGBT VCES = 600V IXGR60N60C2C1 w/ SiC Anti-Parallel IC110 = 39A ≤ Diode VCE(sat) ≤ ≤£ 2.7V ≤ ≤ tfi(typ) = 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C ISOLATED TAB E IC25 TC = 25

5.11. ixgr60n60u1.pdf Size:109K _igbt_a

IXGR64N60A3
IXGR64N60A3

VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°C 75 A E Isolated back surface* IC100

5.12. ixgr60n60b2.pdf Size:511K _igbt_a

IXGR64N60A3
IXGR64N60A3

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (ISOLAT

Anderen IGBT... IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , G40N60B3 , IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A .

 


IXGR64N60A3
  IXGR64N60A3
  IXGR64N60A3
  IXGR64N60A3
 
IXGR64N60A3
  IXGR64N60A3
  IXGR64N60A3
 

social 

Liste

Letztes Update

IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |